dmc3032lsd document number: ds32153 rev. 2 - 2 1 of 9 www.diodes.com july 2014 ? diodes incorporated dmc3032lsd new product complementary pair enh ancement mode mosfet product summary device v (br)dss r ds(on) max i d max t a = +25 ? c (notes 5 & 7) q1 30v 32m ? @ v gs = 10v 8.1a 46m ? @ v gs = 4.5v 6.1a q2 -30v 39m ? @ v gs = -10v -7a 53m ? @ v gs = -4.5v -5.6a description this mosfet has been designed to minimize the on-state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high efficiency po wer management applications. applications ? power management functions ? analog switch ? load switch features ? low on-resistance ? n-channel: 32m ? @ 10v 46m ? @ 4.5v ? p-channel: 39m ? @ 10v 53m ? @ 4.5v ? low input capacitance ? fast switching speed ? low input/output leakage ? complementary pair mosfet ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: so-8 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals connections: see diagram ? terminals: finish - matte tin annealed over copper lead frame. solderable per mil-std-202, method 208 ? marking information (see page 2) ? ordering information ? weight: 0.072 grams (approximate) ordering information (note 4) part number case packaging DMC3032LSD-13 so-8 2,500/tape & reel notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more in formation about diodes incorporated?s definitions of halogen- a nd antimony-free, "green" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our websit e at http://www.diodes.com /products/packages.html. so-8 top view top view d 1 s 1 g 1 d 2 s 2 g 2 n-channel mosfet p-channel mosfet s2 d1 s1 d2 g1 g2 d2 d1 e3
dmc3032lsd document number: ds32153 rev. 2 - 2 2 of 9 www.diodes.com july 2014 ? diodes incorporated dmc3032lsd new product marking information maximum ratings n-channel ? q1 @t a = +25c unless otherwise specified characteristic symbol value unit drain-source voltage v dss 30 v gate-source voltage v gss 20 v continuous drain current (note 5) steady state t a = +25c t a = +85c i d 8.1 5.1 a pulsed drain current (note 6) i dm 25 a maximum ratings p-channel ? q2 @t a = +25c unless otherwise specified characteristic symbol value unit drain-source voltage v dss -30 v gate-source voltage v gss 20 v continuous drain current (note 5) steady state t a = +25c t a = +85c i d -7.0 -4.5 a pulsed drain current (note 6) i dm -25 a thermal characteristics @t a = +25c unless otherwise specified characteristic symbol value unit power dissipation (note 5) p d 2.5 w thermal resistance, junction to ambient (note 5) r ja 50 c/w operating and storage temperature range t j , t stg -55 to +150 c notes: 5. device mounted on fr-4 pcb, with minimum recommended pad layout. 6. repetitive rating, pulse width limited by junction temperature. 1 4 8 5 c3032ld y y w w 1 4 8 5 c3032ld y y w w chengdu a/t site shanghai a/t site = manufacturer?s marking c3032ld = product type marking code yyww = date code marking yy or yy = year (ex: 14 = 2014) ww = week (01 - 53) yy = date code marking for sat (shanghai assembly/ test site) yy = date code marking for cat (chengdu assembly/ test site)
dmc3032lsd document number: ds32153 rev. 2 - 2 3 of 9 www.diodes.com july 2014 ? diodes incorporated dmc3032lsd new product electrical character istics n-channel ? q1 @t a = +25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 7) drain-source breakdown voltage bv dss 30 - - v v gs = 0v, i d = 250a zero gate voltage drain current t j = 25c i dss - - 1 a v ds = 30v, v gs = 0v gate-source leakage i gss - - 100 na v gs = 20v, v ds = 0v on characteristics (note 7) gate threshold voltage v gs ( th ) 1 1.45 2.1 v v ds = v gs , i c = 250a static drain-source on-resistance r ds (on) - 23 32 m ? v gs = 10v, i c = 7a 32 46 v gs = 4.5v, i c = 5.6a forward transfer admittance |y fs | - 7.6 - s v ds = 5v, i c = 7a diode forward voltage (note 7) v sd - 0.7 1 v v gs = 0v, i s = 1a dynamic characteristics (note 8) input capacitance c iss - 404.5 - pf v ds = 15v, v gs = 0v, f = 1mhz output capacitance c oss - 51.8 - pf reverse transfer capacitance c rss - 45.1 - pf gate resistance r g - 1.5 - ? v ds = 0v, v gs = 0v, f = 1mhz total gate charge (10v) q g - 9.2 - nc v gs = 10v, v ds = 15v, i d = 5.8a gate-source charge q g s - 1.2 - nc gate-drain charge q g d - 1.8 - nc turn-on delay time t d ( on ) - 3.4 - ns v gs = 10v, v ds = 15v, r g = 3 ? , r l = 2.6 ? turn-on rise time t r - 6.18 - ns turn-off delay time t d ( off ) - 13.92 - ns turn-off fall time t f - 2.84 - ns 0 4 8 12 16 20 012 345 fig. 1 typical output characteristics v , drain-source voltage (v) ds i, d r ai n c u r r e n t (a) d v = 2.0v gs v = 2.5v gs v = 3.0v gs v = 4.5v gs v = 8.0v gs 0 4 8 12 16 20 01 2 34 fig. 2 typical transfer characteristics v , gate source voltage (v) gs i, d r ain c u r r en t (a) d v = 5v ds t = -55c a t = 25c a t = 125c a t = 150c a t = 85c a
dmc3032lsd document number: ds32153 rev. 2 - 2 4 of 9 www.diodes.com july 2014 ? diodes incorporated dmc3032lsd new product 0.1 1 10 100 fig. 3 typical on-resistance vs. drain current and gate voltage i , drain-source current (a) d 0.01 0.1 1 r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) ? v = 4.5v gs v = 2.5v gs v = 8.0v gs 0 0.02 0.04 0.06 0.08 04 8121620 i , drain current (a) fig. 4 typical drain-source on-resistance vs. drain current and temperature d r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) ? t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 4.5v gs 0.5 0.7 0.9 1.1 1.3 1.5 1.7 fig. 5 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , junction temperature (c) j r , drain-source on-resistance (normalized) ds(on) v = 10v i = 10a gs d v = 4.5v i = 5.0a gs d fig. 6 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , junction temperature (c) j 0 0.01 0.02 0.03 0.0 7 r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) ? 0.04 0.06 0.05 v = 10v i = 10a gs d v = 4.5v i = 5.0a gs d fig. 7 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a 0 0.4 0.8 1.2 1.6 2.0 v, g a t e t h r es h o ld v o l t a g e (v) gs(th) i = 1ma d i = 250a d 0 2 4 6 8 10 12 14 16 18 20 0.2 0.4 0.6 0.8 1.0 1.2 v , source-drain voltage (v) sd fig. 8 diode forward voltage vs. current i, s o u r c e c u r r e n t (a) s t = 25c a
dmc3032lsd document number: ds32153 rev. 2 - 2 5 of 9 www.diodes.com july 2014 ? diodes incorporated dmc3032lsd new product 0 5 10 15 20 25 30 fig. 9 typical capacitance v , drain-source voltage (v) ds 10 100 1,000 c , c a p a c i t a n c e (p f ) f = 1mhz c iss c oss c rss 0 5 10 15 20 25 30 fig. 10 typical drain-source leakage current vs. drain-source voltage v , drain-source voltage (v) ds 1 10 100 1,000 10,000 i, d r ain-s o u r c e leaka g e c u r r en t (na) dss t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a
dmc3032lsd document number: ds32153 rev. 2 - 2 6 of 9 www.diodes.com july 2014 ? diodes incorporated dmc3032lsd new product electrical charact eristics p-channel @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 7) drain-source breakdown voltage bv dss -30 - - v v gs = 0v, i d = -250 a zero gate voltage drain current t j = 25c i dss - - -1 a v ds = -30v, v gs = 0v gate-source leakage i gss - - 100 na v gs = 20v, v ds = 0v on characteristics (note 7) gate threshold voltage v gs ( th ) -1 -1.7 -2.2 v v ds = v gs , i d = -250a static drain-source on-resistance r ds (on) - 30 39 m ? v gs = -10v, i d = -4.3a 42 53 v gs = -4.5v, i d = -3.7a forward transfer admittance |y fs | - 7 - s v ds = -5v, i d = -4.3a diode forward voltage (note 7) v sd - -0.75 -1 v v gs = 0v, i s = -1.7a dynamic characteristics (note 8) input capacitance c iss - 1002 - pf v ds = -15v, v gs = 0v, f = 1mhz output capacitance c oss - 125 - pf reverse transfer capacitance c rss - 118 - pf gate resistance r g - 13 - ? v ds = 0v, v gs = 0v, f = 1mhz total gate charge (4.5v) q g - 10.1 - nc v gs = -4.5v/-10v, v ds = -15v, i d = -6a total gate charge (10v) q g - 21.1 - nc gate-source charge q g s - 2.8 - nc gate-drain charge q g d - 3.2 - nc turn-on delay time t d ( on ) - 10.1 - ns v gs = -10v, v ds = -15v, r g = 6 ? , i d = -1a turn-on rise time t r - 6.5 - ns turn-off delay time t d ( off ) - 50.1 - ns turn-off fall time t f - 22.2 - ns notes: 7. short duration pulse test used to minimize self-heating effect. 8. guaranteed by design. not subject to production testing. 0 5 10 15 20 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 fig. 11 typical output characteristics v , drain-source voltage (v) ds i, d r ai n c u r r e n t (a) d v = 2.5v gs v = 3.0v gs v = 4.5v gs v = 10v gs v = 3.5v gs v = 4.0v gs 0 5 10 15 20 01 2 3 456 fig. 12 typical transfer characteristics v , gate source voltage (v) gs i, d r ain c u r r en t (a) d v = 5v ds t = -55c a t = 25c a t = 125c a t = 150c a t = 85c a
dmc3032lsd document number: ds32153 rev. 2 - 2 7 of 9 www.diodes.com july 2014 ? diodes incorporated dmc3032lsd new product 0 5 10 15 20 fig. 13 typical on-resistance vs. drain current and gate voltage i , drain-source current (a) d 0 0.02 0.04 0.06 0.10 r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) ? 0.08 v = 10v gs v = 4.5v gs 0 0.02 0.04 0.06 0.08 0.10 0 5 10 15 20 r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) ? i , drain current (a) fig. 14 typical drain-source on-resistance vs. drain current and temperature d v = 10v gs t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a 0.5 0.7 0.9 1.1 1.3 1.5 1.7 fig. 15 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , junction temperature (c) j r , drain-source on-resistance (normalized) ds(on) v = 10v i = 10a gs d v = 4.5v i = 5a gs d fig. 16 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , junction temperature (c) j 0 0.01 0.02 0.03 0.04 0.05 0.08 r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) ? 0.07 0.06 v = 10v i = 10a gs d v = 4.5v i = 5a gs d 0 0.5 1.0 1.5 2.0 2.5 fig. 17 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a v , gate threshold voltage (v) gs(th) i = 1ma d i = 250a d 0.4 0.6 0.8 1.0 1.2 1.4 v , source-drain voltage (v) sd fig. 18 diode forward voltage vs. current 0 4 8 12 16 20 i, s o u r c e c u r r e n t (a) s t = 25c a
dmc3032lsd document number: ds32153 rev. 2 - 2 8 of 9 www.diodes.com july 2014 ? diodes incorporated dmc3032lsd new product 10 100 1,000 10,000 0 5 10 15 20 25 30 fig. 19 typical capacitance v , drain-source voltage (v) ds c , c a p a c i t a n c e (p f ) f = 1mhz c iss c oss c rss 0 5 10 15 20 25 30 fig. 20 typical drain-source leakage current vs. drain-source voltage v , drain-source voltage (v) ds 1 10 100 1,000 i, d r ain-s o u r c e leaka g e c u r r en t (na) dss 10,000 t = 25c a t = 85c a t = 125c a t = 150c a package outline dimensions please see ap02001 at http://www.diodes.com/dat asheets/ap02001.pdf for the latest version. suggested pad layout please see ap02001 at http://www.diodes.com/dat asheets/ap02001.pdf for the latest version. so-8 so-8 dim min max a - 1.75 a1 0.10 0.20 a2 1.30 1.50 a3 0.15 0.25 b 0.3 0.5 d 4.85 4.95 e 5.90 6.10 e1 3.85 3.95 e 1.27 typ h - 0.35 l 0.62 0.82 ?? 0 ? 8 ? all dimensions in mm dimensions value (in mm) x 0.60 y 1.55 c1 5.4 c2 1.27 gauge plane seating plane detail ?a? detail ?a? e e1 h l d e b a2 a1 a 45 7 ~ 9 a3 0.254 x c1 c2 y
dmc3032lsd document number: ds32153 rev. 2 - 2 9 of 9 www.diodes.com july 2014 ? diodes incorporated dmc3032lsd new product important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability w hatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when prope rly used in accordance with instructions for use provided in the labeling can be reasonably expected to re sult in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2014, diodes incorporated www.diodes.com
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